Description of High temperature vacuum tube furnace

Xinkyo SK2V series high vacuum tube furnace can reach high vacuum of -4Pa and temperature of 1700℃. Its features of PID control, multi-segment program editing and precise temperature control make it one of the key equipment for ceramics, semiconductors, new energy and material synthesis.

Sepcifications of SK2V high vacuum tube furnace

Model	SK2V-17TP/18TP
Product name	High vacuum tube furnace
Design temperature	1700℃,1800℃
Continiusing using temperature	RT~1700℃
Max vacuum	6*10^-4Pa(at cold state and empty chamber)
Heating zone	OD40/60/80/100/120mm*L205/350/440mm or any other length customized
Gas control	SUS304 sealing flanges with tube fittings included for gas in and out,together with relevant switches
Pump type	Diffusion pump+backing pump or Molecular pump+backing pump
Measurement range	10^-5Pa~10^5Pa
Refractory chamber	1700~1900℃ Al2O3 ceramic fiber splicing board
Heater	1700~1850℃ superior top class MoSi2 heater
Loading room	1800℃ grade Al2O3 tube
Heating rate	≤10℃/minute
Furnace structure	Double layers housing with foraced air cooling and powder coated processing for aging resistance
Safety	Over heating protection,upper temperature limit protection,broken thermalcouple alarm,temperature bias protection,water over temperature alarm,emergency stop
Water chiller	Optional(diffusion pump require the water chiller configured)
Temperature controller	PID and auto tuning function,10groups X50segments temperature time programmable ,curve and datasheet visiual display,data can be exported to U disk then view on PC to view/analysis/print support
Convenience	Universal wheels with brake function included
Warranty	12months warranty with lifetime support(excluding heater,O ring)
Certification	CE,ISO9001.SGS,National High Tech Enterprise certified
Notice	Before inquiry,please kindly share the required actual working temperautre+heating zone size+vacuum for material to be heat treated+voltage/phase,those factors are directly related to price and price varies.

Application of high temperature vacuum tube furnace

High temperature sintering and densification of advanced ceramic materials

Example:Silicon carbide (SiC) ceramics: Pressureless sintering of SiC requires vacuum assistance at 1600~1700℃ (with subsequent argon gas flow), and Al₂O₃-Y₂O₃ sintering aid forms a liquid phase to promote densification, which is used in semiconductor wafer fixtures and burner nozzles.
Zirconia (ZrO₂) toughened ceramics:

Pre-sintering at 1500~1600℃ in vacuum removes organic matter, improves light transmittance and thermal shock resistance, and is suitable for dental restorations and fuel cell electrolytes.
Transparent ceramics (such as YAG, AlON):

1650~1700℃ high vacuum degassing eliminates scattering pores and achieves optical-grade transmittance for laser/missile window applications.

High temperature polarization of piezoelectric ceramics (PZT):

1500℃ vacuum annealing optimizes the grain boundary structure and improves the piezoelectric coefficient d₃₃.

2.Key processes in the semiconductor and photovoltaic industries

Gallium oxide (Ga₂O₃) annealing:
1600℃ vacuum annealing eliminates oxygen vacancies, regulates carrier concentration, and increases Schottky diode breakdown voltage.
Aluminum nitride (AlN) single crystal heat treatment:

1500~1550℃ vacuum annealing reduces dislocation density and improves UV LED luminous efficiency

3.High-end processing of powder materials

Spherical alumina powder (α-Al₂O₃):

1650℃ vacuum melt spray granulation to obtain 3D printing ceramic powder with excellent fluidity (particle size D50=15~45μm).

Boron nitride (hBN) powder crystallization:

1700℃ vacuum treatment improves the crystallinity of hexagonal boron nitride and enhances the performance of thermal conductive